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| AP2302N Advanced Power Electronics Corp. Capable of 2.5V gate drive Small package outline Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85m 3.2A Description SOT-23 G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 20 12 3.2 2.6 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200503044 AP2302N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 6 4.4 0.6 1.9 5.2 37 15 5.7 145 100 50 Max. Units 85 115 1.2 1 10 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=3.6A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS=12V ID=3.6A VDS=10V VGS=4.5V VDS=10V ID=3.6A RG=6,VGS=5V RD=2.8 VGS=0V VDS=10V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V 1 Min. - Typ. - Max. Units 1 10 1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 IS=1.6A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. AP2302N 10 7 T A =25 C 8 o ID , Drain Current (A) ID , Drain Current (A) 4.5V 3.5V 3.0V 2.5V 6 T A =150 C 4.5V 3.5V 3.0V 2.5V V G =2.0V o 5 6 4 3 4 V G =2.0V 2 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 0.5 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.8 I D = 3.1 A T A =25 C 90 I D =3.6A 1.6 o V G =4.5V Normalized R DS(ON) RDS(ON) (m ) 1.4 80 1.2 1.0 70 0.8 60 2 3 4 5 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance 10.0 1.4 1.0 1.0 T j =150 o C T j =25 o C VGS(th) (V) 0.6 0.2 -50 IF (A) 0.1 0.1 0.5 0.9 1.3 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2302N 12 1000 f=1.0MHz VGS , Gate to Source Voltage (V) 10 I D =3.6A V DS =4.5V 8 C (pF) 6 100 C iss C oss 4 C rss 2 0 0 2 4 6 8 10 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 0.2 0.1 0.1 0.05 ID (A) 1ms 1 PDM 0.01 t T 10ms 0.1 0.01 Single Pulse T A =25 o C Single Pulse 100ms 1s DC Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270/W 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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